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Composition, structure and optical properties of sputtered thin films of CuInSe2

Identifieur interne : 008F45 ( Main/Repository ); précédent : 008F44; suivant : 008F46

Composition, structure and optical properties of sputtered thin films of CuInSe2

Auteurs : RBID : Pascal:06-0150449

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Pulvérisation haute fréquence, Stoechiométrie, Diffraction RX, Dépendance température, Grosseur grain, Coefficient absorption, Energie activation, Texture, Croissance cristalline en phase vapeur, Paramètre cristallin, Réseau quadratique, Chalcopyrite, Cuivre séléniure, Indium séléniure, Composé ternaire, Cellule solaire, Couche épaisse, CuInSe2, Cu In Se, Substrat verre, 8115C, 8460J, Analyse RX dispersion énergie.

English descriptors

KwdEn :
- Absorption coefficients, Activation energy, Chalcopyrite, Copper selenides, Crystal growth from vapors, Energy dispersive analysis of X-rays, Experimental study, Grain size, Indium selenides, Lattice parameters, Radiofrequency sputtering, Solar cells, Stoichiometry, Temperature dependence, Ternary compounds, Tetragonal lattices, Texture, Thick films, XRD.

Abstract

Thin films of copper indium selenide (CuInSe₂) were produced by radio frequency (RF) sputtering due to the ability of this technique to achieve stoichiometric layers and its scalability to large-area devices. Results of energy dispersive analysis of X-rays (EDAX) revealed that the sputtered films were near to stoichiometry for substrate temperatures T_Sub not exceeding 200 °C. X-ray diffraction (XRD) patterns indicate that the films exhibited some pattern similar to that of bulk crystals of tetragonal chalcopyrite, predominantly [112] oriented. Based on the XRD patterns, the lattice parameters and grain sizes were examined. The band gap Eg, estimated from optical absorption data, was between 0.6-1.08 eV, depending on sputtering conditions such as substrate temperature and bias voltage. High optical absorption coefficients (> 10⁴ cm^-1) were found.

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Pascal:06-0150449

Le document en format XML

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<author><name sortKey="M Ller, J" uniqKey="M Ller J">J. M Ller</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Saarland, Technical Physics</s1>
<s2>66123 Saarbrücken</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Sarre (Land)</region>
<settlement type="city">Sarrebruck</settlement>
</placeName>
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</author>
<author><name sortKey="Nowoczin, J" uniqKey="Nowoczin J">J. Nowoczin</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Saarland, Technical Physics</s1>
<s2>66123 Saarbrücken</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Sarre (Land)</region>
<settlement type="city">Sarrebruck</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Schmitt, H" uniqKey="Schmitt H">H. Schmitt</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Saarland, Technical Physics</s1>
<s2>66123 Saarbrücken</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="2">Sarre (Land)</region>
<settlement type="city">Sarrebruck</settlement>
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</affiliation>
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<publicationStmt><idno type="inist">06-0150449</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 06-0150449 INIST</idno>
<idno type="RBID">Pascal:06-0150449</idno>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term>
<term>Activation energy</term>
<term>Chalcopyrite</term>
<term>Copper selenides</term>
<term>Crystal growth from vapors</term>
<term>Energy dispersive analysis of X-rays</term>
<term>Experimental study</term>
<term>Grain size</term>
<term>Indium selenides</term>
<term>Lattice parameters</term>
<term>Radiofrequency sputtering</term>
<term>Solar cells</term>
<term>Stoichiometry</term>
<term>Temperature dependence</term>
<term>Ternary compounds</term>
<term>Tetragonal lattices</term>
<term>Texture</term>
<term>Thick films</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Pulvérisation haute fréquence</term>
<term>Stoechiométrie</term>
<term>Diffraction RX</term>
<term>Dépendance température</term>
<term>Grosseur grain</term>
<term>Coefficient absorption</term>
<term>Energie activation</term>
<term>Texture</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Paramètre cristallin</term>
<term>Réseau quadratique</term>
<term>Chalcopyrite</term>
<term>Cuivre séléniure</term>
<term>Indium séléniure</term>
<term>Composé ternaire</term>
<term>Cellule solaire</term>
<term>Couche épaisse</term>
<term>CuInSe2</term>
<term>Cu In Se</term>
<term>Substrat verre</term>
<term>8115C</term>
<term>8460J</term>
<term>Analyse RX dispersion énergie</term>
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</textClass>
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<front><div type="abstract" xml:lang="en">Thin films of copper indium selenide (CuInSe<sub>2</sub>
) were produced by radio frequency (RF) sputtering due to the ability of this technique to achieve stoichiometric layers and its scalability to large-area devices. Results of energy dispersive analysis of X-rays (EDAX) revealed that the sputtered films were near to stoichiometry for substrate temperatures T<sub>Sub</sub>
 not exceeding 200 °C. X-ray diffraction (XRD) patterns indicate that the films exhibited some pattern similar to that of bulk crystals of tetragonal chalcopyrite, predominantly [112] oriented. Based on the XRD patterns, the lattice parameters and grain sizes were examined. The band gap Eg, estimated from optical absorption data, was between 0.6-1.08 eV, depending on sputtering conditions such as substrate temperature and bias voltage. High optical absorption coefficients (> 10<sup>4</sup>
 cm<sup>-1</sup>
) were found.</div>
</front>
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<fA05><s2>496</s2>
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<fA06><s2>2</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Composition, structure and optical properties of sputtered thin films of CuInSe<sub>2</sub>
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<fA11 i1="01" i2="1"><s1>MÜLLER (J.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>NOWOCZIN (J.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SCHMITT (H.)</s1>
</fA11>
<fA14 i1="01"><s1>University of Saarland, Technical Physics</s1>
<s2>66123 Saarbrücken</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>364-370</s1>
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<fA21><s1>2006</s1>
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<s1>© 2006 INIST-CNRS. All rights reserved.</s1>
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<fA60><s1>P</s1>
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<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
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<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Thin films of copper indium selenide (CuInSe<sub>2</sub>
) were produced by radio frequency (RF) sputtering due to the ability of this technique to achieve stoichiometric layers and its scalability to large-area devices. Results of energy dispersive analysis of X-rays (EDAX) revealed that the sputtered films were near to stoichiometry for substrate temperatures T<sub>Sub</sub>
 not exceeding 200 °C. X-ray diffraction (XRD) patterns indicate that the films exhibited some pattern similar to that of bulk crystals of tetragonal chalcopyrite, predominantly [112] oriented. Based on the XRD patterns, the lattice parameters and grain sizes were examined. The band gap Eg, estimated from optical absorption data, was between 0.6-1.08 eV, depending on sputtering conditions such as substrate temperature and bias voltage. High optical absorption coefficients (> 10<sup>4</sup>
 cm<sup>-1</sup>
) were found.</s0>
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<fC02 i1="03" i2="X"><s0>230</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>02</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
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<fC03 i1="02" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0>
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<s5>05</s5>
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<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Grosseur grain</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Grain size</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Coefficient absorption</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Absorption coefficients</s0>
<s5>08</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Energie activation</s0>
<s5>09</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Activation energy</s0>
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<fC03 i1="09" i2="3" l="ENG"><s0>Texture</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Crystal growth from vapors</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Paramètre cristallin</s0>
<s5>12</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Lattice parameters</s0>
<s5>12</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>Réseau quadratique</s0>
<s5>15</s5>
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<fC03 i1="12" i2="3" l="ENG"><s0>Tetragonal lattices</s0>
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<fC03 i1="13" i2="3" l="FRE"><s0>Chalcopyrite</s0>
<s5>16</s5>
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<fC03 i1="13" i2="3" l="ENG"><s0>Chalcopyrite</s0>
<s5>16</s5>
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<s2>NK</s2>
<s5>17</s5>
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<s5>18</s5>
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<fC03 i1="15" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>18</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>19</s5>
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<fC03 i1="16" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>19</s5>
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<s5>20</s5>
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<fC03 i1="17" i2="3" l="ENG"><s0>Solar cells</s0>
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<s5>21</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Thick films</s0>
<s5>21</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>CuInSe2</s0>
<s4>INC</s4>
<s5>52</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>Cu In Se</s0>
<s4>INC</s4>
<s5>53</s5>
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<s4>INC</s4>
<s5>54</s5>
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<fC03 i1="22" i2="3" l="FRE"><s0>8115C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
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<s5>57</s5>
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Composition, structure and optical properties of sputtered thin films of CuInSe2

Composition, structure and optical properties of sputtered thin films of CuInSe2

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri